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Abstract

A new method of suppressing short channel effect without increasing junction leakage and capacitance using a single self-aligning delta-channel implant is described. A pad oxide layer is formed over a semiconductor substrate. A silicon nitride layer is deposited overlying the pad oxide layer and patterned to leave an opening where a gate electrode will be formed. Dielectric spacers are formed on the sidewalls of the opening wherein a portion of the substrate is not covered by the spacers within the opening. A single delta-channel implant is made into the semiconductor substrate using the silicon nitride layer and the dielectric spacers as a mask. This delta-channel implant suppresses short channel effect without increasing junction leakage and capacitance. The dielectric spacers are removed. A polysilicon layer is deposited over the silicon nitride layer and within the opening and polished to leave the polysilicon layer only within the opening. The silicon nitride layer is removed to form a gate electrode wherein the delta-channel implant underlies the gate electrode. Thereafter, lightly doped regions and source and drain regions are formed within the semiconductor substrate associated with the gate electrode to complete fabrication of the integrated circuit device.

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First Claim