Methods for fabricating a semiconductor memory device including flattening of a capacitor dielectric film
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United States of America Patent
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May 15, 2001
Grant Date -
N/A
app pub date -
Dec 1, 1999
filing date -
Apr 22, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In a method for fabrication a semiconductor memory device which has a capacitor having a lower electrode, a dielectric film and an upper electrode stacked in this order, after the dielectric film is formed to a desired film thickness, the dielectric film is flattened by removing the dielectric film by a specified amount. The upper electrode is formed on the flattened
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