Method of making a floating gate memory cell
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United States of America Patent
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May 15, 2001
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May 15, 2000
filing date -
May 15, 2000
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Abstract
A method for making a non-volatile memory cell having a select gate, a floating gate and a control gate of the completely self-aligned type, partially self-aligned type and non-aligned type is disclosed. Further, each of the three types of cells has a floating gate, whose linear dimension can be increased beyond the smallest lithographic feature of the process design rule
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