US Patent No: 6,232,217

Number of patents in Portfolio can not be more than 2000

Post treatment of via opening by N-containing plasma or H-containing plasma for elimination of fluorine species in the FSG near the surfaces of the via opening

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A method of forming a metal interconnect within a fluorinated silica glass dielectric layer while preventing outgassing from the fluorinated silica glass dielectric layer comprising the following steps. A semiconductor structure having a semiconductor device structure formed therein is provided. A metal line is formed over the semiconductor structure. The metal line being electrically connected with the semiconductor device structure. An insulating layer is formed over the semiconductor structure, covering the metal line. A fluorinated silica glass dielectric layer is formed over the insulating layer. The fluorinated silica glass dielectric layer is planarized to form a planarized fluorinated silica glass dielectric layer. The planarized fluorinated silica glass dielectric layer and the insulating layer are patterned to form a via opening to the metal line, and exposing portions of the patterned fluorinated silica glass dielectric layer within the via opening. The via opening is treated with a plasma selected from the group comprising an N-containing plasma, an H-containing plasma, and a combination thereof. A metal interconnect is then formed within the via opening.

Loading the Abstract Image... loading....

First Claim

See full text

all claims..

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddressTotal Patents
CHARTERED SEMICONDUCTOR MANUFACTURING LTD.SINGAPORE738

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ang, Arthur Singapore, SG 5 45
Yi, Xu Singapore, SG 14 108

Cited Art Landscape

Patent Info (Count) # Cites Year
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (3)
5,643,407 Solving the poison via problem by adding N.sub.2 plasma treatment after via etching 29 1994
5,904,566 Reactive ion etch method for forming vias through nitrogenated silicon oxide layers 34 1997
5,970,376 Post via etch plasma treatment method for forming with attenuated lateral etching a residue free via through a silsesquioxane spin-on-glass (SOG) dielectric layer 65 1997
 
UNITED MICROELECTRONICS CORP. (3)
* 6,008,118 Method of fabricating a barrier layer 14 1998
* 6,074,941 Method of forming a via with plasma treatment of SOG 6 1998
* 6,077,784 Chemical-mechanical polishing method 30 1998
 
APPLIED MATERIALS, INC. (2)
5,763,010 Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers 33 1996
5,827,785 Method for improving film stability of fluorosilicate glass films 43 1996
 
MITSUBISHI DENKI KABUSHIKI KAISHA (1)
5,976,626 Semiconductor device and method of manufacturing thereof 4 1996
 
SIEMENS AKTIENGESELLSCHAFT (1)
* 6,008,120 Silicon oxynitride cap for fluorinated silicate glass film in intermetal dielectric semiconductor fabrication 46 1998
 
TEXAS INSTRUMENTS INCORPORATED (1)
5,244,535 Method of manufacturing a semiconductor device including plasma treatment of contact holes 20 1992
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
SOLARWORLD INNOVATIONS GMBH (12)
7,799,371 Extruding/dispensing multiple materials to form high-aspect ratio extruded structures 2 2005
7,765,949 Extrusion/dispensing systems and methods 2 2005
8,322,025 Apparatus for forming a plurality of high-aspect ratio gridline structures 0 2006
7,922,471 Extruded structure with equilibrium shape 1 2006
7,780,812 Extrusion head with planarized edge surface 2 2006
7,928,015 Solar cell fabrication using extruded dopant-bearing materials 2 2006
7,638,438 Solar cell fabrication using extrusion mask 5 2006
7,954,449 Wiring-free, plumbing-free, cooled, vacuum chuck 1 2007
8,226,391 Micro-extrusion printhead nozzle with tapered cross-section 0 2008
8,117,983 Directional extruded bead control 0 2008
8,399,283 Bifacial cell with extruded gridline metallization 0 2009
8,168,545 Solar cell fabrication using extruded dopant-bearing materials 0 2011
 
PALO ALTO RESEARCH CENTER INCORPORATED (5)
7,906,722 Concentrating solar collector with solid optical element 5 2005
7,999,175 Interdigitated back contact silicon solar cells with laser ablated grooves 3 2008
8,080,729 Melt planarization of solar cell bus bars 0 2008
8,426,724 Interdigitated back contact silicon solar cells with separating grooves 0 2010
8,846,431 N-type silicon solar cell with contact/protection structures 0 2014
 
SOLFOCUS, INC. (2)
7,851,693 Passively cooled solar concentrating photovoltaic device 3 2006
7,638,708 Laminated solar concentrating photovoltaic device 9 2006
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (2)
* 7,226,875 Method for enhancing FSG film stability 0 2004
* 8,053,357 Prevention of post CMP defects in CU/FSG process 0 2006
 
DONGBU ELECTRONICS CO., LTD. (1)
* 7,199,041 Methods for fabricating an interlayer dielectric layer of a semiconductor device 0 2004
 
DONGBU HITEK CO., LTD. (1)
* 7,652,354 Semiconductor devices and methods of manufacturing semiconductor devices 0 2006
 
INTEL CORPORATION (1)
* 6,593,650 Plasma induced depletion of fluorine from surfaces of fluorinated low-k dielectric materials 2 2002
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
8,772,100 Structure and method for forming a low gate resistance high-K metal gate transistor device 0 2012
 
LUCENT TECHNOLOGIES INC. (1)
* 6,528,886 Intermetal dielectric layer for integrated circuits 1 2002
 
MICRON TECHNOLOGY, INC. (1)
* 6,846,737 Plasma induced depletion of fluorine from surfaces of fluorinated low-k dielectric materials 8 2000
 
PALO ALTO RESEARCH CENTER INCOPORATION (1)
7,807,544 Solar cell fabrication using extrusion mask 0 2009
* Cited By Examiner