Trench photosensor for a CMOS imager
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United States of America Patent
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May 15, 2001
Grant Date -
N/A
app pub date -
Feb 1, 1999
filing date -
Feb 1, 1999
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A trench photosensor for use in a CMOS imager having an improved charge capacity. The trench photosensor may be either a photogate or photodiode structure. The trench shape of the photosensor provides the photosensitive element with an increased surface area compared to a flat photosensor occupying a comparable area on a substrate. The trench photosensor also exhibits a higher charge capacity, improved dynamic range, and a better signal-to-noise ratio. Also disclosed are processes for forming the trench photosensor.
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