Importance

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Abstract

The present invention is to provide a method for designating a memory bank to be refreshed efficiently and a start and termination procedure of a self-refresh. In a dynamic RAM including a plurality of memory banks 200A, 200B, memory access actions being allowed to be independently on the respective memory banks, and a refresh control circuit for allowing the plurality of memory banks 200A, 200B to be refreshed in a lump and for allowing one memory bank 200A or 200B of the plurality of memory banks designated to be refreshed, a semiconductor memory device is configured such that when a row address input terminal or one of specific input terminals other than the row address input terminal is at a high level, the plurality of memory banks are refreshed in a lump; and when the row address input terminal or one of specific input terminals other than the row address input terminal is at a low level, one of the plurality of memory banks is designated to be refreshed in accordance with a bank selecting bit composed of one bit or a combination of a plurality of bits of row addresses other than the row address.

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First Claim