Plasma etching of silicon using fluorinated gas mixtures
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United States of America Patent
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May 22, 2001
Grant Date -
N/A
app pub date -
Feb 23, 1999
filing date -
Dec 3, 1998
priority date (Note) -
Expired
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Abstract
A method of etching silicon using a gas mixture comprising fluorine (F) and oxygen (O). A fluoro-hydrocarbon gas is also used to provide added flexibility for profile and dimension control in the silicon trench. The method is applied to trench etching in a silicon substrate, and results in an etch rate exceeding about 1 .mu.m/min. with a photoresist selectivity as high as about 9:1. The method can also be applied to etching doped or undoped polysilicon or amorphous silicon.
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