Polarization method for minimizing the effects of hydrogen damage on ferroelectric thin film capacitors
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 29, 2001
Grant Date -
N/A
app pub date -
May 6, 1999
filing date -
May 6, 1999
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Ferroelectric switching properties are severely degraded in a hydrogen ambient atmosphere. By controlling the polarity of the capacitors in a ferroelectric memory during the manufacturing process, the amount of degradation can be significantly reduced. After metalization of a ferroelectric memory wafer, all of the ferroelectric capacitors are poled in the same direction. The polarization vector is in a direction that helps to counteract hydrogen damage. A hydrogen gas anneal is subsequently performed to control underlying CMOS structures while maintaining ferroelectric electrical properties. The wafer is then passivated and tested.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully