Process for fabricating single crystal resonant devices that are compatible with integrated circuit processing
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United States of America Patent
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May 29, 2001
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N/A
app pub date -
Aug 17, 1999
filing date -
Aug 17, 1999
priority date (Note) -
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Abstract
This invention describes fabrication procedures to construct MEMS devices, specifically band-pass filter resonators, in a manner compatible with current integrated circuit processing. The final devices are constructed of single-crystal silicon, eliminating the mechanical problems associated with using polycrystalline silicon or amorphous silicon. The final MEMS device lies below the silicon surface, allowing further processing of the integrated circuit, without any protruding structures. The MEMS device is about the size of a SRAM cell, and may be easily incorporated into existing integrated circuit chips. The natural frequency of the device may be altered with post-processing or electronically controlled using voltages and currents compatible with integrated circuits.
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