Multiple threshold voltage semiconductor device fabrication technology
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United States of America Patent
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May 29, 2001
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N/A
app pub date -
Apr 13, 1999
filing date -
Apr 13, 1999
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Abstract
An integrated circuit process technology for simultaneously forming multiple threshold voltage devices is disclosed. Devices having both high speed and low power consumption can be fabricated for use in integrated circuits having a need for both, such as microprocessors having cache memory.
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