Fabrication process of semiconductor device having an epitaxial substrate
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United States of America Patent
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May 29, 2001
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N/A
app pub date -
Jan 24, 2000
filing date -
May 8, 1998
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Abstract
A semiconductor device formed on an epitaxial substrate includes a high-resistance region in the vicinity of an interface between a doped semiconductor substrate and an epitaxial layer thereon. The high-resistance region is advantageously formed by an ion implantation process of a dopant opposite to a dopant contained in the doped semiconductor substrate such that there is formed a depletion of carriers in the vicinity of the foregoing interface.
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