Sensor thin film transistor for an optical detecting sensor
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United States of America Patent
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May 29, 2001
Grant Date -
N/A
app pub date -
Dec 8, 1999
filing date -
Dec 10, 1998
priority date (Note) -
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Abstract
A sensor TFT includes a substrate, a gate electrode formed on the substrate, a semiconductor layer patterned on the insulating layer to generate an optical current using received light, source and drain electrodes formed on the semiconductor layer, the source and drain electrodes being spaced apart from each other, and a conductive channel defined by an area between the source and drain electrodes, wherein the conductive channel is not rectangular-shaped, such that the channel width is increased for a fixed channel length.
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