Importance

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Abstract

A field insulating film defines a plurality of active regions disposed regularly in terms of two dimension on the surface of a semiconductor substrate. Each active region includes one bit contact region and subsidiary active regions extending from the bit contact region in four directions. A plurality of first word lines are formed which extend as a whole in a first direction on the semiconductor substrate, and a plurality of second word lines are formed which extend as a whole in a second direction on the semiconductor substrate, crossing the first word lines. Two subsidiary active regions cross the first word lines and remaining two subsidiary active regions cross the second word lines. A plurality of bit lines are formed which extend as a whole in the first and second directions on the semiconductor substrate, crossing each other. Each bit contact region is connected to a corresponding one of the bit lines. Four transistors share one bit contact, and these four transistors have different word lines.

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First Claim