Synchronous type semiconductor memory system with less power consumption

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United States of America Patent

PATENT NO 6240048
SERIAL NO

09603508

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Abstract

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A synchronous type dynamic random access memory (SDRAM) includes a memory cell array section having an address decoder section and a sense amplifier section, a power down signal generating section, a control signal generating section and an accessing section. The power down signal generating section generates a first power down signal and a second power down signal based on a clock enable signal, an external clock signal, a signal specific to the SDRAM and a write burst signal. The first power down signal is inactive during a predetermined time period synchronous with the specific signal, and the second power down signal is inactive during the predetermined time period and during a time period during which the write burst signal is supplied. The control signal generating section generates a control signal based on a command signal when the first power down signal is inactive. The accessing section accesses the memory cell array section based on an external address signal and an external data signal in response to the control signal when the first power down signal or the second power down signals is inactive.

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Patent Owner(s)

Patent OwnerAddress
LONGITUDE LICENSING LIMITEDBRACKEN ROAD SANDYFORD FIRST FLOOR BLACKTHORN EXCHANGE DUBLIN D18 P3Y9

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsubara, Yasushi Tokyo, JP 66 422

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