Photovoltaic device and process for producing the same
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United States of America Patent
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Jun 5, 2001
Grant Date -
N/A
app pub date -
Jun 11, 1999
filing date -
Jun 12, 1998
priority date (Note) -
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Abstract
A photovoltaic device have a pin junction of a p-layer, an i-layer and an n-layer, wherein the p-layer includes a first p-layer and a second p-layer thereover, the first p-layer having a thickness of 5 nm or less and being uniformly doped with a p-type impurity, and the second p-layer being formed by decomposition of a gas which does not positively incorporate a p-type impurity.
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