Top gate self-aligned polysilicon TFT and a method for its production
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United States of America Patent
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Jun 12, 2001
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app pub date -
Nov 18, 1999
filing date -
Nov 18, 1999
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Abstract
A top gate, self-aligned polysilicon (poly-Si) thin film transistor (TFT) is formed using a single laser anneal to crystallize the active silicon and to activate the source-drain region. The poly-Si TFT includes a substrate, dummy gate, a barrier oxide layer, a polysilicon pattern having a source region and a drain region, a gate oxide, and a gate.
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