Method for forming capacitor of semiconductor device using high temperature oxidation
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United States of America Patent
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Jun 19, 2001
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N/A
app pub date -
Jun 25, 1999
filing date -
Jun 25, 1998
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Abstract
A method of forming a capacitor of a semiconductor device which can prevent disconnection between lower electrodes by blanket-depositing a second conductive film for silicidation on a semiconductor substrate and forming an oxide of the second conductive film such as titanium dioxide (TiO.sub.2) on an interlayer dielectric using high temperature oxidation, before depositing a dielectric film, and which can obtain a high capacitance by forming both a silicide layer including the second conductive film, and the oxide of the second conductive film such as titanium dioxide (TiO.sub.2) having a high dielectric constant, on a lower electrode, and using the silicide layer and oxide as the dielectric film.
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