Methods of forming insulating materials, and methods of forming insulating materials around a conductive component
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United States of America Patent
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Jun 26, 2001
Grant Date -
N/A
app pub date -
Oct 9, 1997
filing date -
Oct 9, 1997
priority date (Note) -
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Abstract
In one aspect, the invention encompasses a method of forming an insulating material around a conductive component. A first material is chemical vapor deposited over and around a conductive component. Cavities are formed within the first material. After the cavities are formed, at least some of the first material is transformed into an insulative second material. In another aspect, the invention encompasses a method of forming an insulating material. Polysilicon is deposited proximate a substrate. A porosity of the polysilicon is increased. After the porosity is increased, at least some of the polysilicon is transformed into silicon dioxide.
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