Method for coating a resist film
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United States of America Patent
Stats
-
Jun 26, 2001
Grant Date -
N/A
app pub date -
Aug 31, 1999
filing date -
Sep 4, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A resist film having a thickness of 5500 .ANG. or less is coated on the wafer having a large diameter of 8 inches or more by the spin coat process. A resist is dripped while allowing the wafer to be rotated at a rotation speed of 500 rpm to 1200 rpm and the dripping of the resist is suspended at the time of spreading the resist on the whole surface of the wafer. The rotation speed is raised to the predetermined rotation speed which regulates the thickness of the resist film and is determined from the correlation of the predetermined rotation speed and the thickness of the resist film. The wafer is rotated for 1 second to 5 seconds at the predetermined rotation speed. Then, the wafer is rotated for 15 seconds or more at the rotation speed which is lower than the predetermined rotation speed.
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