Maskless photolithography system that digitally shifts mask data responsive to alignment data
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United States of America Patent
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Jun 26, 2001
Grant Date -
N/A
app pub date -
Jul 7, 1999
filing date -
Jul 10, 1998
priority date (Note) -
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status (Latency Note)
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Abstract
A maskless photolithography system for use in photolithography of a desired mask pattern on a photo resist coated subject includes a light source for projecting a collimated beam of light, a first lens system, and a pattern generator. The pattern generator is for generating the desired mask pattern according to prescribed mask pattern information. Upon receipt of the prescribed mask pattern information, the pattern generator generates a resident mask pattern therein to be imaged upon the photo resist coated subject. A mask pattern design system is provided for outputting the prescribed mask pattern information corresponding to the desired mask pattern to the pattern generator. The maskless photolithography system further includes a second lens system and a subject stage. The subject stage is provided for receiving the subject thereon during a photolithographic exposure, wherein light from the light source is directed through the first lens system, from the first lens system to the pattern generator and emanating from the pattern generator with the desired mask pattern, into the second lens system, and lastly onto the photo resist coated subject.
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