Isotropic dry cleaning process for noble metal integrated circuit structures
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United States of America Patent
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Jul 3, 2001
Grant Date -
N/A
app pub date -
Jun 8, 1998
filing date -
Nov 10, 1997
priority date (Note) -
Expired
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Abstract
A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composition, e.g., XeF.sub.2, SF.sub.6, SiF.sub.4, Si.sub.2 F.sub.6 or SiF.sub.3 and SiF.sub.2 radicals. The method may be carried out in a batch-cleaning mode, in which fresh charges of cleaning gas are successively introduced to a chamber containing the residue-bearing microelectronic device structure. Each charge is purged from the chamber after reaction with the residue, and the charging/purging is continued until the residue has been at least partially removed to a desired extent. Alternatively, the cleaning gas may be continuously flowed through the chamber containing the microelectronic device structure, until the noble metal residue has been sufficiently removed.
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