Method for forming a ferroelectric capacitor under the bit line
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United States of America Patent
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-
Jul 3, 2001
Grant Date -
N/A
app pub date -
Jan 27, 1999
filing date -
Jan 27, 1999
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A structure and method for forming an integrated circuit structure including forming at least one transistor structure, forming at least one ferroelectric capacitor above the transistor structure, annealing the ferroelectric capacitor, and forming at least one conductive contact between the transistor structure and the ferroelectric capacitor.
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