Methods of forming a contact having titanium silicide and titanium formed by chemical vapor deposition
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United States of America Patent
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Jul 3, 2001
Grant Date -
N/A
app pub date -
Aug 19, 1999
filing date -
Aug 21, 1997
priority date (Note) -
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Abstract
Methods arc provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). The methods include forming titanium silicide in the contact. One method includes forming titanium silicide by combining a titanium precursor in the presence of hydrogen, H.sub.2. Another method includes forming titanium silicide by combining titanium tetrachloride, TiCl.sub.4, in the presence of hydrogen. A further method includes forming titanium silicide by combining tetradimethyl amino titanium, Ti(N(CH.sub.3).sub.2).sub.4, in the presence of hydrogen. The methods may further include forming titanium in the contact.
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