Semiconductor integrated circuit device and method of manufacturing the same
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United States of America Patent
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Jul 10, 2001
Grant Date -
N/A
app pub date -
Sep 3, 1999
filing date -
Sep 3, 1998
priority date (Note) -
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status (Latency Note)
Importance
Abstract
In order to improve connection reliability of a feeding interconnection connected to an electrode of each of the information storage capacitive elements of a DRAM, the formation of a through hole for connecting the information storage capacitive element formed over each memory cell selection MISFET and a feeding interconnection is performed in a process different from that for the formation of a through hole for connecting an interconnection of a second wiring layer in a peripheral circuit, which is formed over the information storage capacitive element and an interconnection corresponding to a first wiring layer.
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