Method for forming metal line of semiconductor device by (TiA1)N anti-reflective coating layer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 10, 2001
Grant Date -
N/A
app pub date -
Jun 30, 1999
filing date -
Jun 30, 1998
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
There is provided a method for forming a metal line of a semiconductor device, in which a (TiAl)N layer having a lower reflectivity and permeability is formed as anti-reflective coating layer. Since the (TiAl)N anti-reflective coating layer effectively prevent a metal line from reflecting in lightening process using a shorter wavelength such as DUV, a fine metal line can be formed exactly.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully