Trench thyristor with improved breakdown voltage characteristics
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United States of America Patent
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-
Jul 10, 2001
Grant Date -
N/A
app pub date -
Jul 9, 1998
filing date -
Jul 11, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A MOS-controllable power semiconductor trench device has a gate in the form of a trench which extends through a region of p type silicon into an n type region of low conductivity. A discontinous buried p layer below the bottom of the trench forms part of a thyristor which in operation is triggered into conduction by conduction of a PIN diode which is produced when an accumulation layer is formed in the n type region adjacent to the trench under the action of an on-state gate signal. The device has a high on-state conductivity and is protected against high voltage breakdown in its off-state by the presence of the buried layer. An off-state gate signal causes removal of the accumulation layer and conduction of the PIN diode and the thyristor ceases in safe, reliable and rapid manner.
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