Method and apparatus for controlling photolithography parameters based on photoresist images
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United States of America Patent
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Jul 10, 2001
Grant Date -
N/A
app pub date -
Oct 5, 1999
filing date -
Oct 5, 1999
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Abstract
A method for controlling uniformity in a wafer is provided. A wafer is provided. A layer of photoresist is formed on the wafer, and the photoresist layer is patterned. A portion of the patterned photoresist layer is illuminated in at least first and second positions. Light reflected at the two positions is measured to generate first and second measurements. A recipe of a stepper is adjusted in response to the first measurement differing from the second measurement. A wafer processing system includes a stepper, a scatterometer, and a process controller. The stepper is adapted to expose a layer of photoresist in accordance with a recipe to generate an exposed layer of photoresist. The scatterometer is adapted to take first and second measurements in at least first and second positions on the exposed layer of photoresist. The process controller is adapted to compare the first and second measurements and adjust the recipe based on the first and second measurements.
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