Use of palladium immersion deposition to selectively initiate electroless plating on Ti and W alloys for wafer fabrication
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United States of America Patent
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Jul 17, 2001
Grant Date -
N/A
app pub date -
Dec 15, 1995
filing date -
Dec 15, 1995
priority date (Note) -
Expired
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Abstract
A method for making integrated circuit wafers wherein the wafer has vias or other openings in the wafer which openings have a barrier/adhesion or other metal layer which is metallized to form the circuit comprising activating the metal layer and then sensitizing the metallic layer using a sensitizing displacement composition comprising preferably an alkaline palladium non-ammonia nitrogen (ethylene diamine) complex which is contacted with the wafer at a specially controlled pH. The wafer is activated using an activation solution which contains a complexing agent for any dissolved metal. The sensitizing solution also preferably contains a complexing agent for dissolved metal and preferably contains a second complexing agent such as EDTA to solubilize base metal contaminants.
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