Synchronous DRAM having posted CAS latency and method for controlling CAS latency

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United States of America Patent

PATENT NO 6262938
SERIAL NO

09518144

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Abstract

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A synchronous DRAM (SDRAM) having a posted column access strobe (CAS) latency and a method of controlling CAS latency are provided. In order to control a delay time from the application of a CAS command and a column address to the beginning of memory, reading or writing operations in units of clock cycles, a first method of programing the delay time as a mode register set (MRS) and a second method of detecting the delay time using an internal signal and an external signal, are provided. In the second method, the SDRAM can include a counter for controlling the CAS latency. This counter controls the CAS latency of the SDRAM by generating a signal for controlling the CAS latency according to the number of clock cycles of a clock signal from the generation of a row access command to a column access command in the same memory bank and reading the signal. It is therefore possible to appropriately perform a posted CAS latency operation and a general CAS latency operation by the SDRAM without an additional MRS command according to this SDRAM and the method of controlling the CAS latency.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Dong-yang Kyungki-do, KR 37 1052
Lee, Jung-bae Kyungki-do, KR 126 2842
Shin, Choong-sun Kyungki-do, KR 25 398

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