Degassing method using simultaneous dry gas flux pressure and vacuum
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United States of America Patent
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Jul 24, 2001
Grant Date -
N/A
app pub date -
Jul 10, 2000
filing date -
Jul 10, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An apparatus and method for clamping and heating a wafer without using moving parts and without exposing the wafer to external stress is provided. A high backside wafer pressure which provides efficient heat transfer from a heated substrate support to the wafer is offset by a high frontside wafer pressure higher than or lower than the backside wafer pressure. The high frontside pressure reduces wafer stress by providing a uniform frontside/backside pressure and presses the wafer against the heated substrate support. A continuous gas purge for providing a viscous flow across the wafer to carry away desorbed contaminants, and frontside heating elements for improving desorption are provided.
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