Process chamber having improved gas distributor and method of manufacture
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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-
Jul 24, 2001
Grant Date -
N/A
app pub date -
Jan 22, 1999
filing date -
Jan 22, 1999
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A process chamber 15 for processing a substrate 30, such as a semiconductor wafer, comprises a support 20 having a surface 25 for supporting the substrate 30. A gas distributor 50 in the chamber comprises a gas manifold 110 comprising at least one insert 140 having an orifice 115 for passing gas from the gas manifold 110 into the process chamber 15. Preferably, the gas manifold 110 extends about a perimeter 130 of the substrate 30 and comprises a plurality of inserts 140 made from dielectric material.
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