Method for forming an insulating film on semiconductor substrate surface and apparatus for carrying out the method
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United States of America Patent
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Jul 24, 2001
Grant Date -
N/A
app pub date -
Jun 17, 1998
filing date -
Jun 20, 1997
priority date (Note) -
Expired
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Abstract
Disclosed are a method and apparatus for forming an insulating film on the surface of a semiconductor substrate capable of improving the quality and electrical properties of the insulating film with no employment of high-temperature heating and with good controllability. After the surface of a silicon substrate is cleaned, a silicon dioxide film having a thickness of 1-20 nm is formed on the substrate surface. The silicon substrate is exposed to plasma generated by electron impact, while the silicon substrate is maintained at a temperature of 0.degree. C. to 700.degree. C. Thus, nitrogen atoms are incorporated into the silicon dioxide film, obtaining a modified insulating film having good electrical properties.
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