Stepper and scanner new exposure sequence with intra-field correction
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United States of America Patent
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Jul 24, 2001
Grant Date -
N/A
app pub date -
Aug 26, 1999
filing date -
Aug 26, 1999
priority date (Note) -
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Abstract
A method and system are provided for determining the degree of overlay misregistration when exposing a semiconductor wafer having a center and a periphery comprises the following steps. Expose the wafer with a scan in a sequence from the center of the wafer to the periphery. Select dies on the periphery of a wafer for measurement which represent a maximum degree of distortion, and employ a correction algorithm for calculating an intrafield reduction ratio to minimize heat expansion.
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