Guardring DRAM cell
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United States of America Patent
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Jul 24, 2001
Grant Date -
N/A
app pub date -
Dec 21, 1999
filing date -
Dec 28, 1998
priority date (Note) -
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Abstract
An improved memory cell (600) for use in a high-intensity light environment. The memory (600) comprises a substrate (616) capable of generating photocarriers when exposed to radiant energy, at least one transistor (602), at least one capacitor (604), and address node (610) electrically connecting the transistor (602) and the capacitor (604), and an active collector region (626). The active collector region (626) is fabricated in the substrate (616) in a position to allow the active collector region (626) to recombine photocarriers traveling through the substrate (616) thus preventing the photocarriers from reaching the address node (610).
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