Method for pulling a single crystal
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 31, 2001
Grant Date -
N/A
app pub date -
Oct 5, 1999
filing date -
Oct 15, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for pulling a single crystal has a monocrystalline seed crystal being brought into contact with molten material and an interface being formed between solid and molten material, and molten material being caused to solidify with the formation of a thin-necked crystal and a cylindrical single crystal. The method is one wherein, during the pulling of the thin-necked crystal, it is ensured that the ratio V/G(r) is above a constant C.sub.crit having the value 1.3*10.sup.-3 cm.sup.2 /Kmin, with V being the pulling rate, with G(r) being the axial temperature gradient at the interface and r being the radial distance from the center of the thin-necked crystal.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully