Oxidizing polishing slurries for low dielectric constant materials
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United States of America Patent
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Aug 7, 2001
Grant Date -
N/A
app pub date -
Sep 24, 1998
filing date -
Sep 24, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.
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