Thin film transistor and method of manufacturing the same
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United States of America Patent
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Aug 7, 2001
Grant Date -
Mar 29, 2001
app pub date -
Nov 29, 2000
filing date -
Dec 26, 1995
priority date (Note) -
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Abstract
A thin film transistor includes a substrate, a gate electrode formed on the substrate, and including opposing edge portions and a middle portion. An insulating film is formed on the surface of the gate electrode having a greater thickness on one of the gate edge portions. An active region is formed on the surface of the insulating film and the exposed substrate. The active region includes an off-set region, a channel region, a source region, and a drain region.
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