Process for etching a polycrystalline Si(1-x)Ge(x) layer or a stack of polycrystalline Si(1-x)Ge(x) layer and of a polycrystalline Si layer, and its application to microelectronics
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United States of America Patent
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Aug 7, 2001
Grant Date -
N/A
app pub date -
Jun 23, 1998
filing date -
Jun 25, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The process for etching a polycrystalline Si.sub.1-x Ge.sub.x layer or a stack includes a polycrystalline Si.sub.1-x Ge.sub.x layer and of a polycrystalline Si layer, deposited on a substrate and including, at its surface, a mask of inorganic material, includes main etching step in which the said layer or the said stack is anisotropically etched, using the said mask, by means of a high-density gas plasma of a gas mixture consisting of chlorine (Cl.sub.2) and of either nitrogen (N.sub.2) or ammonia (NH.sub.3) or of a nitrogen/ammonia mixture.
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