Importance

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Abstract

A plasma processing apparatus capable of attracting and holding a semiconductor wafer reliably once the processing of the semiconductor wafer is started includes: a vacuum chamber; an electrode arranged inside the vacuum chamber; a dielectric film formed on a surface of the electrode; a gas supply port leading to the vacuum chamber; a high-frequency electric power supply connected to the electrode; a memory operation unit which depends on a processing condition for producing a desired plasma, to calculate and output the voltage value corresponding to the sum of a value of a minimal actual attract and hold voltage required to be applied between one surface of the semiconductor wafer mounted on the dielectric film and a surface of the dielectric film to attract and hold one surface of the semiconductor wafer on the surface of the dielectric film and a value of a self-bias voltage generated at the other surface of the semiconductor wafer when the desired plasma is produced; and an electrostatic chuck power supply for applying the voltage corresponding to the voltage value calculated in the memory operation unit to the electrode. An electrostatic attract and hold vacuum chucking method employed in the plasma processing apparatus is also disclosed.

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First Claim