Importance

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Abstract

A method for making a semiconductor device includes forming a plurality of transistors in a semiconductor substrate, forming a first dielectric layer overlying the semiconductor substrate, and selectively etching the first dielectric layer to form a first opening exposing a first transistor portion and a second transistor portion. Conducting material is deposited into the first opening to define a merged contact between the first transistor portion and the second transistor portion. The method further includes forming a second dielectric layer overlying the first dielectric layer and the merged contact, and selectively etching the second dielectric layer to form a second opening exposing the merged contact, and while selectively etching the second and first dielectric layers to form a third opening exposing a source/drain region of a third transistor to define a self-aligned contact. Conducting material is deposited into the second opening to define a first via with the merged contact, and conducting material is also deposited into the third opening to define a second via with the source/drain region of the third transistor. The self-aligned contact and the merged contact are formed using a reduced number of masks and masking steps.

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First Claim