Transistor having a nitrogen incorporated epitaxially grown gate dielectric and method of making same
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United States of America Patent
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Aug 14, 2001
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N/A
app pub date -
Jul 15, 1998
filing date -
Jul 15, 1998
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Abstract
An integrated circuit fabrication process is provided for incorporating barrier atoms, preferably nitrogen atoms, within a barrier layer. The barrier layer is interposed between the gate dielectric and the semiconductor substrate. The barrier layer serves to inhibit the passage of dopants from the gate conductor into the channel area. The barrier layer is preferably a nitrogen doped silicon epitaxial layer. The barrier layer may be composed of two layers, a silicon epitaxial layer and a nitrogen doped epitaxial layer formed upon the silicon epitaxial layer.
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