Thermoelectric semiconductor material, manufacture process therefor, and method of hot forging thermoelectric module using the same
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United States of America Patent
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Aug 14, 2001
Grant Date -
N/A
app pub date -
Mar 15, 1999
filing date -
Sep 13, 1996
priority date (Note) -
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Abstract
A thermoelectric semiconductor material having sufficient strength and performance and high production yield. The thermoelectric semiconductor material is characterized in that a sintered powder material of a thermoelectric semiconductor having a rhombohedral structure (or hexagonal structure) is hot-forged and plastically deformed to direct either the crystals of the sintered powder structure or the subcrystals constructing the crystals in a crystal orientation having an excellent figure of merit.
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