Apparatus for fabricating semiconductor device and fabrication method therefor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Aug 21, 2001
Grant Date -
N/A
app pub date -
May 8, 2000
filing date -
Sep 14, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A crystal growing apparatus comprises a vacuum vessel, a heating lamp, a lamp controller for controlling the heating lamp, a gas inlet port, a flow rate adjuster for adjusting the flow rate of a gas, a pyrometer for measuring the temperature of a substrate, and a gas supply unit for supplying a Si.sub.2 H.sub.6 gas or the like to the vacuum vessel. An apparatus for ellipsometric measurement comprises: a light source, a polariscope, a modulator, an analyzer, a spectroscope/detector unit, and an analysis control unit for calculating .PSI., .DELTA.. In removing a chemical oxide film on the substrate therefrom, in-situ ellipsometric measurement allows a discrimination between a phase 1 during which a surface of the substrate is covered with the oxide film and a phase 2 during which the surface of the substrate is partially exposed so that the supply of gas suitable for the individual phases is performed and halted.
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