Method for fabricating a low resistance Poly-Si/metal gate

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6277719
SERIAL NO

09439364

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Abstract

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A method for forming a low resistance metal/polysilicon gate for use in CMOS devices comprising: (1) a novel anneal step prior to formation of a diffusion barrier layer and (2) a novel diffusion barrier layer composed of titanium nitride deposited over titanium silicide or titanium nitride deposited directly on the polysilicon. A first insulating layer is formed over a silicon substrate, and a polysilicon layer is formed over the first insulating layer. In a key step, the polysilicon layer is annealed to prevent peeling of the subsequently formed diffusion barrier layer. A diffusion barrier layer comprising titanium nitride deposited over titanium silicide or titanium nitride deposited directly on the polysilicon is formed over the polysilicon layer. A tungsten layer is formed over the diffusion barrier layer, and a capping layer comprising a silicon nitride layer over an oxide layer can be formed over the tungsten layer. The capping layer, the tungsten layer, the diffusion barrier layer, and the first insulating layer are patterned, thereby defining a gate structure.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATIONHSIN-CHU511

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Randy C H Hsinchu, TW 1 15
Chern, Jin-Dong Hsinchu, TW 4 19
Liaw, Ing-Ruey Hsinchu, TW 36 733
Tsai, Kwong-Jr Chunghsung, TW 6 120

Cited Art Landscape

Patent Info (Count) # Cites Year
 
LUCENT TECHNOLOGIES INC. (1)
* 6147388 Polycide gate structure with intermediate barrier 11 1997
 
UNITED MICROELECTRONICS CORP. (1)
* 5350698 Multilayer polysilicon gate self-align process for VLSI CMOS device 43 1993
 
FREESCALE SEMICONDUCTOR, INC. (1)
5384285 Process for fabricating a silicide layer in a semiconductor device 25 1993
 
RAICU, BRUHA (1)
* 4561907 Process for forming low sheet resistance polysilicon having anisotropic etch characteristics 25 1984
 
TEXAS INSTRUMENTS INCORPORATED (1)
5593924 Use of a capping layer to attain low titanium-silicide sheet resistance and uniform silicide thickness for sub-micron silicon and polysilicon lines 45 1995
 
KABUSHIKI KAISHA TOSHIBA (1)
* 5103272 Semiconductor device and a method for manufacturing the same 34 1990
 
WINBOND ELECTRONICS CORP. (1)
5668065 Process for simultaneous formation of silicide-based self-aligned contacts and local interconnects 55 1996
 
AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. (1)
* 6017808 Nitrogen implanted polysilicon gate for MOSFET gate oxide hardening 41 1997
 
Top Team/Microelectronics Corp. (1)
5550079 Method for fabricating silicide shunt of dual-gate CMOS device 30 1995
 
APTINA IMAGING CORPORATION (1)
* 6198144 Passivation of sidewalls of a word line stack 55 1999
 
CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC. (1)
* 5441904 Method for forming a two-layered polysilicon gate electrode in a semiconductor device using grain boundaries 69 1994
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
* 6504210 Fully encapsulated damascene gates for Gigabit DRAMs 23 2000
 
NANYA TECHNOLOGY CORPORATION (2)
* 7101777 Methods for manufacturing stacked gate structure and field effect transistor provided with the same 4 2004
* 2005/0074,957 Methods for manufacturing stacked gate structure and field effect transistor povided with the same 4 2004
 
RPX CORPORATION (1)
* 6509254 Method of forming electrode structure and method of fabricating semiconductor device 8 2000
 
PS4 LUXCO S.A.R.L. (2)
* 6800543 Semiconductor device having a low-resistance gate electrode 12 2002
* 2003/0170,942 Semiconductor device having a low-resistance gate electrode 3 2002
 
GLOBALFOUNDRIES INC. (2)
* 7029966 Process options of forming silicided metal gates for advanced CMOS devices 40 2003
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LONGITUDE SEMICONDUCTOR S.A.R.L. (2)
* 7078777 Semiconductor device having a low-resistance gate electrode 0 2004
* 2005/0020,045 Semiconductor device having a low-resistance gate electrode 0 2004
 
RENESAS ELECTRONICS CORPORATION (2)
* 6677230 Method of manufacturing semiconductor device 28 2002
7407880 Semiconductor device and manufacturing process therefore 0 2004
 
CLEARONE COMMUNICATIONS, INC. (2)
* 7326610 Process options of forming silicided metal gates for advanced CMOS devices 28 2005
* 2006/0105,515 Process options of forming silicided metal gates for advanced CMOS devices 9 2005
 
SAMSUNG ELECTRONICS CO., LTD. (7)
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7501673 Semiconductor device multilayer structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method 2 2005
* 2006/0223,249 Semiconductor device multilayer structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method 1 2005
7534709 Semiconductor device and method of manufacturing the same 5 2005
* 2006/0014,355 Semiconductor device and method of manufacturing the same 2 2005
7439176 Semiconductor device multilayer structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method 1 2006
* 2006/0223,252 SEMICONDUCTOR DEVICE MULTILAYER STRUCTURE, FABRICATION METHOD FOR THE SAME, SEMICONDUCTOR DEVICE HAVING THE SAME, AND SEMICONDUCTOR DEVICE FABRICATION METHOD 2 2006
 
SK HYNIX INC. (2)
* 9159779 Method of fabricating semiconductor device 0 2012
* 2014/0004,679 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 1 2012
 
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (1)
* 6514841 Method for manufacturing gate structure for use in semiconductor device 3 2001
 
OKI SEMICONDUCTOR CO., LTD. (1)
* 6686277 Method of manufacturing semiconductor device 6 2000
* Cited By Examiner