Solar cell having an integral monolithically grown bypass diode
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United States of America Patent
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-
Aug 21, 2001
Grant Date -
N/A
app pub date -
May 19, 1999
filing date -
May 28, 1998
priority date (Note) -
In Force
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Abstract
The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.
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