Sputtering apparatus for filling pores of a circular substrate
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United States of America Patent
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Aug 28, 2001
Issued Date -
N/A
app pub date -
Nov 3, 1997
filing date -
Oct 28, 1992
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A sputtering apparatus in which the distance between a target and a substrate is made to be at least greater than the diameter of the circular substrate wafer and an internal gas pressure level of a vacuum chamber is held to be not higher than 1.times.10.sup.-1 Pa during sputtering process, thereby capable of effectively filling pores provided on the substrate without generating dust and void spaces.
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