US Patent No: 6,280,684

Number of patents in Portfolio can not be more than 2000

Sputtering target, method of producing the target, optical recording medium fabricated by using the sputtering target, and method of fabricating the optical recording medium

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A sputtering target for fabricating a recording layer of a phase-change type optical recording medium contains a compound or mixture including as constituent elements Ag, In, Te and Sb with the respective atomic percent (atom. %) of .alpha., .beta., .gamma. and .delta. thereof being in the relationship of 2.ltoreq..alpha..ltoreq.30, 3.ltoreq..beta..ltoreq.30, 10.ltoreq..gamma..ltoreq.50, 15.ltoreq..delta..ltoreq.83 and .alpha.+.beta.+.gamma.+.delta.=100, and a method of producing the above sputtering target is provided. A phase-change type optical recording medium includes a recording layer containing as constituent elements Ag, In, Te and Sb with the respective atomic percent of .alpha., .beta., .gamma. and .delta. thereof being in the relationship of 0<.alpha..ltoreq.30, 0<.beta..ltoreq.30, 10.ltoreq..gamma..ltoreq.50, 10.ltoreq..delta..ltoreq.80, and .alpha.+.beta.+.gamma.+.delta.=100, and is capable of recording and erasing information by utilizing the phase changes of a recording material in the recording layer. A method of fabricating the above phase-change type optical recording medium is also provided.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
RICOH COMPANY, LTD.TOKYO18145

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Deguchi, Hiroshi Yokohama, JP 85 689
Harigaya, Makoto Kanagawa, JP 61 1023
Hayashi, Yoshitaka Kanagawa, JP 70 631
Ide, Yukio Mishima, JP 35 887
Iwasaki, Hiroko Tokyo, JP 36 858
Kageyama, Yoshiyuki Kanagawa, JP 40 786
Takahashi, Masaetsu Yokohama, JP 15 384
Yamada, Katsuyuki Shizuoka, JP 95 1033

Cited Art Landscape

Patent Info (Count) # Cites Year
 
RICOH COMPANY, LTD. (9)
5,011,723 Optical information recording medium 35 1989
5,024,927 Information recording medium 35 1989
5,080,947 Information recording medium 36 1990
5,100,700 Information recording medium 38 1990
5,156,693 Information recording medium 26 1991
5,785,828 Sputtering target for producing optical recording medium 33 1995
5,736,657 Sputtering target 51 1996
6,127,016 Sputtering target, method of producing the target, optical recording medium fabricated by using the sputtering target, and method of fabricating the optical recording medium 21 1997
5,882,493 Heat treated and sintered sputtering target 13 1997
 
MITSUBISHI KAGAKU MEDIA CO., LTD. (1)
5,581,539 Optical recording medium 71 1995
 
NEC CORPORATION (1)
5,650,992 Phase change optical disc 12 1996
 
RAKUTEN, INC. (1)
5,719,006 Optical information recording medium 25 1996

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
MACRONIX INTERNATIONAL CO., LTD. (188)
7,385,235 Spacer chalcogenide memory device 88 2004
7,220,983 Self-aligned small contact phase-change memory method and device 180 2004
7,321,130 Thin film fuse phase change RAM and manufacturing method 107 2005
7,238,994 Thin film plate phase change ram circuit and manufacturing method 96 2005
7,608,503 Side wall active pin memory and manufacturing method 10 2005
7,507,986 Thermal isolation for an active-sidewall phase change memory cell 48 2006
7,432,206 Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram 2 2006
7,394,088 Thermally contained/insulated phase change memory device and method (combined) 106 2006
7,956,358 I-shaped phase change memory cell with thermal isolation 1 2006
7,635,855 I-shaped phase change memory cell 9 2006
7,825,396 Self-align planerized bottom electrode phase change memory and manufacturing method 0 2006
7,471,555 Thermally insulated phase change memory device 4 2006
7,599,217 Memory cell device and manufacturing method 3 2006
8,062,833 Chalcogenide layer etching method 0 2006
7,910,907 Manufacturing method for pipe-shaped electrode phase change memory 1 2006
7,397,060 Pipe shaped phase change memory 98 2006
7,554,144 Memory device and manufacturing method 6 2006
7,928,421 Phase change memory cell with vacuum spacer 6 2006
7,829,876 Vacuum cell thermal isolation for a phase change memory device 5 2006
7,479,649 Vacuum jacketed electrode for phase change memory element 63 2006
7,449,710 Vacuum jacket for phase change memory element 85 2006
7,521,364 Surface topology improvement method for plug surface areas 0 2006
7,456,421 Vertical side wall active pin structures in a phase change memory and manufacturing methods 7 2006
8,129,706 Structures and methods of a bistable resistive random access memory 5 2006
7,608,848 Bridge resistance random access memory device with a singular contact structure 57 2006
7,605,079 Manufacturing method for phase change RAM with electrode layer process 5 2006
7,514,367 Method for manufacturing a narrow structure on an integrated circuit 0 2006
7,423,300 Single-mask phase change memory element 95 2006
7,820,997 Resistor random access memory cell with reduced active area and reduced contact areas 0 2006
7,732,800 Resistor random access memory cell with L-shaped electrode 0 2006
7,459,717 Phase change memory cell and manufacturing method 14 2006
7,414,258 Spacer electrode small pin phase change memory RAM and manufacturing method 2 2006
8,237,140 Self-aligned, embedded phase change RAM 0 2006
7,642,539 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 1 2006
7,560,337 Programmable resistive RAM and manufacturing method 23 2006
7,696,506 Memory cell with memory material insulation and manufacturing method 3 2006
7,785,920 Method for making a pillar-type phase change memory element 2 2006
7,741,636 Programmable resistive RAM and manufacturing method 2 2006
7,450,411 Phase change memory device and manufacturing method 2 2006
7,595,218 Programmable resistive RAM and manufacturing method 2 2006
7,531,825 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 2 2006
7,442,603 Self-aligned structure and method for confining a melting point in a resistor random access memory 7 2006
7,598,512 Thin film fuse phase change cell with thermal isolation layer and manufacturing method 2 2006
7,772,581 Memory device having wide area phase change element and small electrode contact area 27 2006
7,504,653 Memory cell device with circumferentially-extending memory element 22 2006
7,510,929 Method for making memory cell device 2 2006
7,863,655 Phase change memory cells with dual access devices 1 2006
7,527,985 Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas 1 2006
7,388,771 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 4 2006
8,067,762 Resistance random access memory structure for enhanced retention 2 2006
7,816,661 Air cell thermal isolation for a memory array formed of a programmable resistive material 1 2006
7,682,868 Method for making a keyhole opening during the manufacture of a memory cell 0 2006
7,476,587 Method for making a self-converged memory material element for memory cell 19 2006
7,697,316 Multi-level cell resistance random access memory with metal oxides 50 2006
7,903,447 Method, apparatus and computer program product for read before programming process on programmable resistive memory cell 0 2006
8,344,347 Multi-layer electrode structure 0 2006
7,688,619 Phase change memory cell and manufacturing method 62 2006
7,718,989 Resistor random access memory cell device 4 2006
7,786,460 Phase change memory device and manufacturing method 47 2007
7,440,315 Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell 12 2007
7,433,226 Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell 8 2007
7,483,292 Memory cell with separate read and program paths 5 2007
8,008,643 Phase change memory cell with heater and method for fabricating the same 0 2007
7,619,237 Programmable resistive memory cell with self-forming gap 3 2007
7,534,647 Damascene phase change RAM and manufacturing method 2 2007
7,956,344 Memory cell with memory element contacting ring-shaped upper end of bottom electrode 3 2007
7,786,461 Memory structure with reduced-size memory element between memory material portions 8 2007
8,610,098 Phase change memory bridge cell with diode isolation device 0 2007
7,755,076 self align side wall active phase change memory 22 2007
7,569,844 Memory cell sidewall contacting side electrode 31 2007
7,514,334 Thin film plate phase change RAM circuit and manufacturing method 54 2007
7,463,512 Memory element with reduced-current phase change element 12 2007
7,701,759 Memory cell device and programming methods 12 2007
8,513,637 4F2 self align fin bottom electrodes FET drive phase change memory 0 2007
7,483,316 Method and apparatus for refreshing programmable resistive memory 1 2007
7,884,342 Phase change memory bridge cell 0 2007
7,729,161 Phase change memory with dual word lines and source lines and method of operating same 7 2007
7,696,503 Multi-level memory cell having phase change element and asymmetrical thermal boundary 16 2007
8,178,386 Phase change memory cell array with self-converged bottom electrode and method for manufacturing 3 2007
7,642,125 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 13 2007
7,663,135 Memory cell having a side electrode contact 5 2007
7,551,473 Programmable resistive memory with diode structure 15 2007
7,535,756 Method to tighten set distribution for PCRAM 10 2007
7,919,766 Method for making self aligning pillar memory cell device 3 2007
7,804,083 Phase change memory cell including a thermal protect bottom electrode and manufacturing methods 1 2007
7,646,631 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 3 2007
7,579,613 Thin film fuse phase change RAM and manufacturing method 12 2007
7,639,527 Phase change memory dynamic resistance test and manufacturing methods 3 2008
7,884,343 Phase change memory cell with filled sidewall memory element and method for fabricating the same 5 2008
7,879,643 Memory cell with memory element contacting an inverted T-shaped bottom electrode 2 2008
7,879,645 Fill-in etching free pore device 11 2008
7,619,311 Memory cell device with coplanar electrode surface and method 10 2008
8,158,965 Heating center PCRAM structure and methods for making 1 2008
7,932,101 Thermally contained/insulated phase change memory device and method 1 2008
8,084,842 Thermally stabilized electrode structure 1 2008
7,791,057 Memory cell having a buried phase change region and method for fabricating the same 9 2008
7,701,750 Phase change device having two or more substantial amorphous regions in high resistance state 13 2008
7,586,778 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 46 2008
8,415,651 Phase change memory cell having top and bottom sidewall contacts 0 2008
7,642,123 Thermally insulated phase change memory manufacturing method 3 2008
7,867,815 Spacer electrode small pin phase change RAM and manufacturing method 0 2008
7,777,215 Resistive memory structure with buffer layer 20 2008
7,932,506 Fully self-aligned pore-type memory cell having diode access device 2 2008
7,903,457 Multiple phase change materials in an integrated circuit for system on a chip application 5 2008
7,842,536 Vacuum jacket for phase change memory element 1 2008
7,719,913 Sensing circuit for PCRAM applications 1 2008
8,243,494 Self-aligned structure and method for confining a melting point in a resistor random access memory 0 2008
8,324,605 Dielectric mesh isolated phase change structure for phase change memory 2 2008
7,897,954 Dielectric-sandwiched pillar memory device 0 2008
7,932,129 Vertical side wall active pin structures in a phase change memory and manufacturing methods 0 2008
8,036,014 Phase change memory program method without over-reset 5 2008
7,902,538 Phase change memory cell with first and second transition temperature portions 2 2008
8,664,689 Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions 0 2008
7,638,359 Method for making a self-converged void and bottom electrode for memory cell 4 2008
7,749,854 Method for making a self-converged memory material element for memory cell 0 2008
7,687,307 Vacuum jacketed electrode for phase change memory element 0 2008
7,869,270 Set algorithm for phase change memory cell 2 2008
8,089,137 Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method 19 2009
7,923,285 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 2 2009
8,107,283 Method for setting PCRAM devices 3 2009
8,030,635 Polysilicon plug bipolar transistor for phase change memory 2 2009
7,910,906 Memory cell device with circumferentially-extending memory element 0 2009
8,084,760 Ring-shaped electrode and manufacturing method for same 3 2009
8,173,987 Integrated circuit 3D phase change memory array and manufacturing method 5 2009
8,077,505 Bipolar switching of phase change device 1 2009
8,097,871 Low operational current phase change memory structures 1 2009
8,134,857 Methods for high speed reading operation of phase change memory and device employing same 1 2009
7,933,139 One-transistor, one-resistor, one-capacitor phase change memory 7 2009
7,972,893 Memory device manufacturing method 0 2009
8,350,316 Phase change memory cells having vertical channel access transistor and memory plane 0 2009
7,968,876 Phase change memory cell having vertical channel access transistor 3 2009
8,158,963 Programmable resistive RAM and manufacturing method 0 2009
8,809,829 Phase change memory having stabilized microstructure and manufacturing method 0 2009
8,406,033 Memory device and method for sensing and fixing margin cells 0 2009
8,064,247 Rewritable memory device based on segregation/re-absorption 1 2009
8,110,822 Thermal protect PCRAM structure and methods for making 2 2009
7,894,254 Refresh circuitry for phase change memory 3 2009
7,924,600 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 2 2009
8,198,619 Phase change memory cell structure 0 2009
8,064,248 2T2R-1T1R mix mode phase change memory array 1 2009
8,110,429 Bridge resistance random access memory device and method with a singular contact structure 0 2009
7,879,692 Programmable resistive memory cell with self-forming gap 0 2009
7,972,895 Memory cell device with coplanar electrode surface and method 2 2009
7,993,962 I-shaped phase change memory cell 0 2009
8,143,612 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 2 2009
8,062,923 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 0 2009
7,893,418 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 0 2009
7,964,863 Memory cell having a side electrode contact 0 2009
7,929,340 Phase change memory cell and manufacturing method 3 2010
7,964,468 Multi-level memory cell having phase change element and asymmetrical thermal boundary 1 2010
8,238,149 Methods and apparatus for reducing defect bits in phase change memory 1 2010
8,111,541 Method of a multi-level cell resistance random access memory with metal oxides 1 2010
7,920,415 Memory cell device and programming methods 0 2010
8,059,449 Phase change device having two or more substantial amorphous regions in high resistance state 1 2010
8,363,463 Phase change memory having one or more non-constant doping profiles 1 2010
8,178,387 Methods for reducing recrystallization time for a phase change material 0 2010
8,178,405 Resistor random access memory cell device 1 2010
7,978,509 Phase change memory with dual word lines and source lines and method of operating same 2 2010
8,080,440 Resistor random access memory cell with L-shaped electrode 0 2010
8,178,388 Programmable resistive RAM and manufacturing method 2 2010
8,729,521 Self aligned fin-type programmable memory cell 1 2010
8,237,148 self align side wall active phase change memory 0 2010
8,310,864 Self-aligned bit line under word line memory array 1 2010
7,964,437 Memory device having wide area phase change element and small electrode contact area 2 2010
7,943,920 Resistive memory structure with buffer layer 0 2010
8,008,114 Phase change memory device and manufacturing method 0 2010
7,875,493 Memory structure with reduced-size memory element between memory material portions 3 2010
8,039,392 Resistor random access memory cell with reduced active area and reduced contact areas 1 2010
8,395,935 Cross-point self-aligned reduced cell size phase change memory 0 2010
8,143,089 Self-align planerized bottom electrode phase change memory and manufacturing method 1 2010
8,097,487 Method for making a phase change memory device with vacuum cell thermal isolation 1 2010
8,110,430 Vacuum jacket for phase change memory element 0 2010
8,497,705 Phase change device for interconnection of programmable logic device 0 2010
8,467,238 Dynamic pulse operation for phase change memory 0 2010
8,110,456 Method for making a self aligning memory device 0 2010
8,094,488 Set algorithm for phase change memory cell 1 2010
8,263,960 Phase change memory cell with filled sidewall memory element and method for fabricating the same 0 2010
8,315,088 Multiple phase change materials in an integrated circuit for system on a chip application 0 2011
8,228,721 Refresh circuitry for phase change memory 0 2011
8,222,071 Method for making self aligning pillar memory cell device 0 2011
8,313,979 Phase change memory cell having vertical channel access transistor 0 2011
8,324,681 Stacked non-volatile memory device and methods for fabricating the same 0 2011
8,237,144 Polysilicon plug bipolar transistor for phase change memory 0 2011
8,587,983 Resistance random access memory structure for enhanced retention 0 2011
8,779,408 Phase change memory cell structure 0 2012
8,860,111 Phase change memory cell array with self-converged bottom electrode and method for manufacturing 0 2012
8,624,236 Phase change memory cell having vertical channel access transistor 0 2012
8,853,047 Self aligned fin-type programmable memory cell 0 2014
 
RICOH COMPANY, LTD. (13)
6,592,958 Optical recording medium and sputtering target for fabricating the recording medium 5 2001
6,652,806 Method of producing a sputtering target 6 2001
7,507,523 Optical information recording medium, method of manufacturing the optical information recording medium, and method of and apparatus for recording/reproducing optical information 5 2001
6,827,999 Optical information recording medium 11 2002
7,075,871 Method and device for recording optical data 29 2003
6,958,180 Phase change optical recording medium 3 2003
7,288,224 Method of producing a sputtering target 3 2003
7,042,831 Optical information recording medium 0 2004
6,933,032 Write-once-read-many optical recording media and process for recording and reproducing information on the media 11 2004
7,413,788 Write-once-read-many optical recording media and process for recording and reproducing information on the media 4 2005
7,414,954 Optical information recording medium 0 2006
7,411,887 Optical information recording medium 3 2006
7,496,021 Method and device for recording optical data 0 2006
 
QIMONDA AG (4)
7,515,461 Current compliant sensing architecture for multilevel phase change memory 55 2007
8,138,028 Method for manufacturing a phase change memory device with pillar bottom electrode 3 2007
8,030,634 Memory array with diode driver and method for fabricating the same 1 2008
7,825,398 Memory cell having improved mechanical stability 1 2008
 
TOHOKU UNIVERSITY (2)
8,663,439 Sputtering target for producing metallic glass membrane and manufacturing method thereof 0 2005
8,652,399 Sputtering target for producing metallic glass membrane and manufacturing method thereof 0 2010
 
JX NIPPON MINING & METALS CORPORATION (1)
8,430,978 Sputtering target and method for production thereof 1 2004
 
VOLKSWAGEN AG (1)
7,520,273 Exhaust-gas recirculation device and method for operating an exhaust-gas recirculation device 3 2007