Sputtering target, method of producing the target, optical recording medium fabricated by using the sputtering target, and method of fabricating the optical recording medium

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United States of America Patent

PATENT NO 6280684
SERIAL NO

09488063

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A sputtering target for fabricating a recording layer of a phase-change type optical recording medium contains a compound or mixture including as constituent elements Ag, In, Te and Sb with the respective atomic percent (atom. %) of .alpha., .beta., .gamma. and .delta. thereof being in the relationship of 2.ltoreq..alpha..ltoreq.30, 3.ltoreq..beta..ltoreq.30, 10.ltoreq..gamma..ltoreq.50, 15.ltoreq..delta..ltoreq.83 and .alpha.+.beta.+.gamma.+.delta.=100, and a method of producing the above sputtering target is provided. A phase-change type optical recording medium includes a recording layer containing as constituent elements Ag, In, Te and Sb with the respective atomic percent of .alpha., .beta., .gamma. and .delta. thereof being in the relationship of 0<.alpha..ltoreq.30, 0<.beta..ltoreq.30, 10.ltoreq..gamma..ltoreq.50, 10.ltoreq..delta..ltoreq.80, and .alpha.+.beta.+.gamma.+.delta.=100, and is capable of recording and erasing information by utilizing the phase changes of a recording material in the recording layer. A method of fabricating the above phase-change type optical recording medium is also provided.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
RICOH COMPANY, LTD.TOKYO17305

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Deguchi, Hiroshi Yokohama, JP 70 777
Harigaya, Makoto Hiratsuka, JP 50 1049
Hayashi, Yoshitaka Machida, JP 53 692
Ide, Yukio Mishima, JP 34 922
Iwasaki, Hiroko Tokyo, JP 35 876
Kageyama, Yoshiyuki Yokohama, JP 36 818
Takahashi, Masaetsu Yokohama, JP 13 401
Yamada, Katsuyuki Mishima, JP 74 1068

Cited Art Landscape

Patent Info (Count) # Cites Year
 
NEC CORPORATION (1)
* 5650992 Phase change optical disc 12 1996
 
RICOH COMPANY, LTD. (9)
5011723 Optical information recording medium 35 1989
5024927 Information recording medium 35 1989
5080947 Information recording medium 37 1990
5100700 Information recording medium 38 1990
5156693 Information recording medium 26 1991
* 5785828 Sputtering target for producing optical recording medium 33 1995
* 5736657 Sputtering target 52 1996
* 6127016 Sputtering target, method of producing the target, optical recording medium fabricated by using the sputtering target, and method of fabricating the optical recording medium 22 1997
* 5882493 Heat treated and sintered sputtering target 14 1997
 
RAKUTEN, INC. (1)
* 5719006 Optical information recording medium 25 1996
 
MITSUBISHI KAGAKU MEDIA CO., LTD. (1)
* 5581539 Optical recording medium 73 1995
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (1)
* 2004/0017,768 Phase change optical recording medium 0 2003
 
MACRONIX INTERNATIONAL CO., LTD. (271)
7385235 Spacer chalcogenide memory device 95 2004
* 2005/0093,022 Spacer chalcogenide memory device 22 2004
7220983 Self-aligned small contact phase-change memory method and device 202 2004
7321130 Thin film fuse phase change RAM and manufacturing method 117 2005
7238994 Thin film plate phase change ram circuit and manufacturing method 121 2005
* 2006/0284,157 Thin film plate phase change RAM circuit and manufacturing method 33 2005
7608503 Side wall active pin memory and manufacturing method 20 2005
* 2006/0108,667 Method for manufacturing a small pin on integrated circuits or other devices 180 2005
7507986 Thermal isolation for an active-sidewall phase change memory cell 53 2006
7432206 Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram 2 2006
7394088 Thermally contained/insulated phase change memory device and method (combined) 124 2006
* 2007/0173,063 Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram 20 2006
7956358 I-shaped phase change memory cell with thermal isolation 3 2006
7635855 I-shaped phase change memory cell 9 2006
* 2008/0043,520 I-shaped phase change memory cell with thermal isolation 109 2006
7825396 Self-align planerized bottom electrode phase change memory and manufacturing method 0 2006
* 2007/0158,645 Self-align planerized bottom electrode phase change memory and manufacturing method 162 2006
7471555 Thermally insulated phase change memory device 5 2006
7599217 Memory cell device and manufacturing method 3 2006
* 2007/0117,315 Memory cell device and manufacturing method 184 2006
8062833 Chalcogenide layer etching method 1 2006
7910907 Manufacturing method for pipe-shaped electrode phase change memory 3 2006
7397060 Pipe shaped phase change memory 117 2006
* 2007/0108,429 Pipe shaped phase change memory 22 2006
7554144 Memory device and manufacturing method 7 2006
* 2007/0241,371 Memory device and manufacturing method 4 2006
7928421 Phase change memory cell with vacuum spacer 9 2006
7829876 Vacuum cell thermal isolation for a phase change memory device 5 2006
7479649 Vacuum jacketed electrode for phase change memory element 67 2006
7449710 Vacuum jacket for phase change memory element 90 2006
* 2007/0158,862 Vacuum jacketed electrode for phase change memory element 162 2006
* 2007/0131,980 Vacuum jacket for phase change memory element 15 2006
7521364 Surface topology improvement method for plug surface areas 0 2006
7456421 Vertical side wall active pin structures in a phase change memory and manufacturing methods 11 2006
* 2007/0176,261 Vertical Side Wall Active Pin Structures in a Phase Change Memory and Manufacturing Methods 62 2006
8129706 Structures and methods of a bistable resistive random access memory 10 2006
* 2007/0257,300 Structures and Methods of a Bistable Resistive Random Access Memory 143 2006
7608848 Bridge resistance random access memory device with a singular contact structure 91 2006
* 2007/0262,388 Bridge Resistance Random Access Memory Device and Method With A Singular Contact Structure 124 2006
7605079 Manufacturing method for phase change RAM with electrode layer process 12 2006
7514367 Method for manufacturing a narrow structure on an integrated circuit 2 2006
* 2007/0155,172 Manufacturing Method for Phase Change RAM with Electrode Layer Process 179 2006
* 2006/0286,743 Method for Manufacturing a Narrow Structure on an Integrated Circuit 165 2006
7423300 Single-mask phase change memory element 104 2006
7820997 Resistor random access memory cell with reduced active area and reduced contact areas 2 2006
7732800 Resistor random access memory cell with L-shaped electrode 4 2006
* 2007/0278,529 RESISTOR RANDOM ACCESS MEMORY CELL WITH L-SHAPED ELECTRODE 25 2006
7459717 Phase change memory cell and manufacturing method 18 2006
7414258 Spacer electrode small pin phase change memory RAM and manufacturing method 2 2006
* 2007/0121,363 Phase Change Memory Cell and Manufacturing Method 37 2006
8237140 Self-aligned, embedded phase change RAM 7 2006
* 2006/0284,158 SELF-ALIGNED, EMBEDDED PHASE CHANGE RAM AND MANUFACTURING METHOD 179 2006
7642539 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 4 2006
* 2007/0131,922 Thin Film Fuse Phase Change Cell with Thermal Isolation Pad and Manufacturing Method 163 2006
7560337 Programmable resistive RAM and manufacturing method 34 2006
7696506 Memory cell with memory material insulation and manufacturing method 15 2006
7785920 Method for making a pillar-type phase change memory element 3 2006
7741636 Programmable resistive RAM and manufacturing method 5 2006
* 2007/0161,186 Programmable Resistive RAM and Manufacturing Method 176 2006
7450411 Phase change memory device and manufacturing method 4 2006
7595218 Programmable resistive RAM and manufacturing method 3 2006
* 2007/0158,690 Programmable Resistive RAM and Manufacturing Method 170 2006
7531825 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 2 2006
7442603 Self-aligned structure and method for confining a melting point in a resistor random access memory 11 2006
* 2008/0121,861 Self-Aligned Structure and Method for Confining a Melting Point in a Resistor Random Access Memory 4 2006
7598512 Thin film fuse phase change cell with thermal isolation layer and manufacturing method 2 2006
* 2006/0284,214 THIN FILM FUSE PHASE CHANGE CELL WITH THERMAL ISOLATION LAYER AND MANUFACTURING METHOD 170 2006
7772581 Memory device having wide area phase change element and small electrode contact area 79 2006
7504653 Memory cell device with circumferentially-extending memory element 35 2006
7510929 Method for making memory cell device 2 2006
* 2008/0096,375 Method for Making Memory Cell Device 5 2006
7863655 Phase change memory cells with dual access devices 1 2006
7527985 Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas 5 2006
7388771 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 7 2006
* 2008/0106,923 Phase Change Memory Cells with Dual Access Devices 27 2006
* 2008/0094,885 Bistable Resistance Random Access Memory Structures with Multiple Memory Layers and Multilevel Memory States 6 2006
* 2008/0096,341 Method for Manufacturing a Resistor Random Access Memory with Reduced Active Area and Reduced Contact Areas 5 2006
8067762 Resistance random access memory structure for enhanced retention 5 2006
* 2008/0116,440 Resistance Random Access Memory Structure for Enhanced Retention 8 2006
7816661 Air cell thermal isolation for a memory array formed of a programmable resistive material 7 2006
7682868 Method for making a keyhole opening during the manufacture of a memory cell 1 2006
7476587 Method for making a self-converged memory material element for memory cell 25 2006
* 2008/0138,931 Method for Making a Self-Converged Void and Bottom Electrode for Memoery Cell 52 2006
* 2008/0138,929 Method for Making a Self-Converged Memory Material Element for Memory Cell 71 2006
7697316 Multi-level cell resistance random access memory with metal oxides 85 2006
* 2008/0135,824 Method and Structure of a Multi-Level Cell Resistance Random Access Memory with Metal Oxides 15 2006
7903447 Method, apparatus and computer program product for read before programming process on programmable resistive memory cell 2 2006
* 2008/0144,353 Method, Apparatus and Computer Program Product for Read Before Programming Process on Programmable Resistive Memory Cell 3 2006
8344347 Multi-layer electrode structure 0 2006
7688619 Phase change memory cell and manufacturing method 96 2006
7718989 Resistor random access memory cell device 11 2006
* 2008/0157,053 Resistor Random Access Memory Cell Device 44 2006
7786460 Phase change memory device and manufacturing method 79 2007
7440315 Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell 21 2007
7433226 Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell 8 2007
* 2007/0109,843 Phase Change Memory Device and Manufacturing Method 162 2007
7483292 Memory cell with separate read and program paths 6 2007
* 2008/0186,761 Memory Cell with Separate Read and Program Paths 2 2007
8008643 Phase change memory cell with heater and method for fabricating the same 0 2007
7619237 Programmable resistive memory cell with self-forming gap 4 2007
7534647 Damascene phase change RAM and manufacturing method 6 2007
* 2008/0197,334 Phase Change Memory Cell with Heater and Method for Fabricating the Same 91 2007
7956344 Memory cell with memory element contacting ring-shaped upper end of bottom electrode 6 2007
* 2008/0203,375 Memory Cell with Memory Element Contacting Ring-Shaped Upper End of Bottom Electrode 3 2007
7786461 Memory structure with reduced-size memory element between memory material portions 15 2007
8610098 Phase change memory bridge cell with diode isolation device 0 2007
7755076 self align side wall active phase change memory 49 2007
7569844 Memory cell sidewall contacting side electrode 40 2007
* 2008/0258,126 Memory Cell Sidewall Contacting Side Electrode 44 2007
7514334 Thin film plate phase change RAM circuit and manufacturing method 62 2007
7463512 Memory element with reduced-current phase change element 22 2007
7701759 Memory cell device and programming methods 14 2007
* 2008/0186,755 MEMORY CELL DEVICE AND PROGRAMMING METHODS 90 2007
8513637 4F2 self align fin bottom electrodes FET drive phase change memory 3 2007
7483316 Method and apparatus for refreshing programmable resistive memory 1 2007
* 2008/0266,933 Method and Apparatus for Refreshing Programmable Resistive Memory 8 2007
7884342 Phase change memory bridge cell 1 2007
7729161 Phase change memory with dual word lines and source lines and method of operating same 7 2007
9018615 Resistor random access memory structure having a defined small area of electrical contact 0 2007
7696503 Multi-level memory cell having phase change element and asymmetrical thermal boundary 22 2007
8178386 Phase change memory cell array with self-converged bottom electrode and method for manufacturing 4 2007
7642125 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 22 2007
7663135 Memory cell having a side electrode contact 5 2007
7551473 Programmable resistive memory with diode structure 21 2007
7535756 Method to tighten set distribution for PCRAM 14 2007
7919766 Method for making self aligning pillar memory cell device 18 2007
7804083 Phase change memory cell including a thermal protect bottom electrode and manufacturing methods 7 2007
7646631 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 18 2007
7579613 Thin film fuse phase change RAM and manufacturing method 22 2007
7639527 Phase change memory dynamic resistance test and manufacturing methods 4 2008
7884343 Phase change memory cell with filled sidewall memory element and method for fabricating the same 10 2008
7879643 Memory cell with memory element contacting an inverted T-shaped bottom electrode 3 2008
7879645 Fill-in etching free pore device 14 2008
7619311 Memory cell device with coplanar electrode surface and method 14 2008
8158965 Heating center PCRAM structure and methods for making 2 2008
7932101 Thermally contained/insulated phase change memory device and method 6 2008
* 2008/0166,875 THERMALLY CONTAINED/INSULATED PHASE CHANGE MEMORY DEVICE AND METHOD (COMBINED) 89 2008
8084842 Thermally stabilized electrode structure 4 2008
7791057 Memory cell having a buried phase change region and method for fabricating the same 13 2008
7701750 Phase change device having two or more substantial amorphous regions in high resistance state 14 2008
7586778 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 79 2008
8415651 Phase change memory cell having top and bottom sidewall contacts 4 2008
7642123 Thermally insulated phase change memory manufacturing method 4 2008
7867815 Spacer electrode small pin phase change RAM and manufacturing method 2 2008
7777215 Resistive memory structure with buffer layer 43 2008
7932506 Fully self-aligned pore-type memory cell having diode access device 4 2008
7903457 Multiple phase change materials in an integrated circuit for system on a chip application 8 2008
7842536 Vacuum jacket for phase change memory element 1 2008
* 2009/0023,242 VACUUM JACKET FOR PHASE CHANGE MEMORY ELEMENT 61 2008
7719913 Sensing circuit for PCRAM applications 4 2008
8243494 Self-aligned structure and method for confining a melting point in a resistor random access memory 0 2008
8324605 Dielectric mesh isolated phase change structure for phase change memory 4 2008
7897954 Dielectric-sandwiched pillar memory device 0 2008
7932129 Vertical side wall active pin structures in a phase change memory and manufacturing methods 3 2008
* 2009/0042,335 VERTICAL SIDE WALL ACTIVE PIN STRUCTURES IN A PHASE CHANGE MEMORY AND MANUFACTURING METHODS 62 2008
8036014 Phase change memory program method without over-reset 12 2008
7902538 Phase change memory cell with first and second transition temperature portions 2 2008
8907316 Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions 1 2008
8664689 Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions 0 2008
7638359 Method for making a self-converged void and bottom electrode for memory cell 6 2008
* 2009/0104,771 METHOD FOR MAKING A SELF-CONVERGED VOID AND BOTTOM ELECTRODE FOR MEMORY CELL 11 2008
7749854 Method for making a self-converged memory material element for memory cell 1 2008
7687307 Vacuum jacketed electrode for phase change memory element 1 2008
7869270 Set algorithm for phase change memory cell 5 2008
8089137 Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method 76 2009
7923285 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 10 2009
8107283 Method for setting PCRAM devices 3 2009
8030635 Polysilicon plug bipolar transistor for phase change memory 2 2009
8933536 Polysilicon pillar bipolar transistor with self-aligned memory element 2 2009
7910906 Memory cell device with circumferentially-extending memory element 1 2009
* 2009/0140,230 Memory Cell Device With Circumferentially-Extending Memory Element 1 2009
8084760 Ring-shaped electrode and manufacturing method for same 6 2009
8173987 Integrated circuit 3D phase change memory array and manufacturing method 26 2009
8077505 Bipolar switching of phase change device 2 2009
8097871 Low operational current phase change memory structures 1 2009
8134857 Methods for high speed reading operation of phase change memory and device employing same 1 2009
7933139 One-transistor, one-resistor, one-capacitor phase change memory 28 2009
7972893 Memory device manufacturing method 1 2009
8350316 Phase change memory cells having vertical channel access transistor and memory plane 4 2009
7968876 Phase change memory cell having vertical channel access transistor 10 2009
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8809829 Phase change memory having stabilized microstructure and manufacturing method 1 2009
8406033 Memory device and method for sensing and fixing margin cells 6 2009
8064247 Rewritable memory device based on segregation/re-absorption 2 2009
* 2010/0321,987 MEMORY DEVICE AND METHOD FOR SENSING AND FIXING MARGIN CELLS 5 2009
* 2010/0177,553 REWRITABLE MEMORY DEVICE 6 2009
8110822 Thermal protect PCRAM structure and methods for making 18 2009
7894254 Refresh circuitry for phase change memory 5 2009
* 2011/0012,079 THERMAL PROTECT PCRAM STRUCTURE AND METHODS FOR MAKING 4 2009
* 2011/0013,446 REFRESH CIRCUITRY FOR PHASE CHANGE MEMORY 16 2009
7924600 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 4 2009
8198619 Phase change memory cell structure 2 2009
* 2011/0049,456 PHASE CHANGE STRUCTURE WITH COMPOSITE DOPING FOR PHASE CHANGE MEMORY 16 2009
8064248 2T2R-1T1R mix mode phase change memory array 4 2009
8110429 Bridge resistance random access memory device and method with a singular contact structure 0 2009
7879692 Programmable resistive memory cell with self-forming gap 1 2009
* 2010/0029,062 PROGRAMMABLE RESISTIVE MEMORY CELL WITH SELF-FORMING GAP 7 2009
7972895 Memory cell device with coplanar electrode surface and method 2 2009
7993962 I-shaped phase change memory cell 3 2009
8143612 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 2 2009
8062923 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 3 2009
7893418 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 1 2009
7964863 Memory cell having a side electrode contact 2 2009
7929340 Phase change memory cell and manufacturing method 6 2010
7964468 Multi-level memory cell having phase change element and asymmetrical thermal boundary 3 2010
* 2010/0151,652 MULTI-LEVEL MEMORY CELL HAVING PHASE CHANGE ELEMENT AND ASYMMETRICAL THERMAL BOUNDARY 29 2010
8238149 Methods and apparatus for reducing defect bits in phase change memory 5 2010
8111541 Method of a multi-level cell resistance random access memory with metal oxides 5 2010
7920415 Memory cell device and programming methods 0 2010
* 2010/0328,995 METHODS AND APPARATUS FOR REDUCING DEFECT BITS IN PHASE CHANGE MEMORY 19 2010
* 2010/0216,279 METHOD OF A MULTI-LEVEL CELL RESISTANCE RANDOM ACCESS MEMORY WITH METAL OXIDES 6 2010
* 2010/0157,665 MEMORY CELL DEVICE AND PROGRAMMING METHODS 9 2010
8059449 Phase change device having two or more substantial amorphous regions in high resistance state 1 2010
8363463 Phase change memory having one or more non-constant doping profiles 2 2010
* 2010/0328,996 PHASE CHANGE MEMORY HAVING ONE OR MORE NON-CONSTANT DOPING PROFILES 21 2010
8178387 Methods for reducing recrystallization time for a phase change material 5 2010
8178405 Resistor random access memory cell device 3 2010
* 2011/0097,825 Methods For Reducing Recrystallization Time for a Phase Change Material 2 2010
7978509 Phase change memory with dual word lines and source lines and method of operating same 3 2010
* 2010/0195,378 Phase Change Memory With Dual Word Lines and Source Lines and Method of Operating Same 3 2010
8080440 Resistor random access memory cell with L-shaped electrode 6 2010
* 2010/0207,095 RESISTOR RANDOM ACCESS MEMORY CELL WITH L-SHAPED ELECTRODE 16 2010
8178388 Programmable resistive RAM and manufacturing method 5 2010
* 2010/0221,888 Programmable Resistive RAM and Manufacturing Method 3 2010
8729521 Self aligned fin-type programmable memory cell 5 2010
8237148 self align side wall active phase change memory 1 2010
* 2010/0237,316 4F2 SELF ALIGN SIDE WALL ACTIVE PHASE CHANGE MEMORY 6 2010
8310864 Self-aligned bit line under word line memory array 5 2010
7964437 Memory device having wide area phase change element and small electrode contact area 4 2010
7943920 Resistive memory structure with buffer layer 5 2010
* 2010/0276,658 Resistive Memory Structure with Buffer Layer 4 2010
8008114 Phase change memory device and manufacturing method 1 2010
* 2010/0291,747 Phase Change Memory Device and Manufacturing Method 30 2010
7875493 Memory structure with reduced-size memory element between memory material portions 7 2010
8039392 Resistor random access memory cell with reduced active area and reduced contact areas 3 2010
8395935 Cross-point self-aligned reduced cell size phase change memory 9 2010
8143089 Self-align planerized bottom electrode phase change memory and manufacturing method 3 2010
8097487 Method for making a phase change memory device with vacuum cell thermal isolation 3 2010
* 2011/0034,003 Vacuum Cell Thermal Isolation for a Phase Change Memory Device 25 2010
8110430 Vacuum jacket for phase change memory element 2 2010
8497705 Phase change device for interconnection of programmable logic device 0 2010
8467238 Dynamic pulse operation for phase change memory 2 2010
8110456 Method for making a self aligning memory device 1 2010
8094488 Set algorithm for phase change memory cell 4 2010
* 2011/0075,475 SET ALGORITHM FOR PHASE CHANGE MEMORY CELL 2 2010
8263960 Phase change memory cell with filled sidewall memory element and method for fabricating the same 1 2010
* 2011/0133,150 Phase Change Memory Cell with Filled Sidewall Memory Element and Method for Fabricating the Same 4 2010
8315088 Multiple phase change materials in an integrated circuit for system on a chip application 1 2011
* 2011/0116,308 MULTIPLE PHASE CHANGE MATERIALS IN AN INTEGRATED CIRCUIT FOR SYSTEM ON A CHIP APPLICATION 1 2011
8228721 Refresh circuitry for phase change memory 3 2011
* 2011/0116,309 Refresh Circuitry for Phase Change Memory 22 2011
8912515 Manufacturing method for pipe-shaped electrode phase change memory 0 2011
* 2011/0163,288 Manufacturing Method for Pipe-Shaped Electrode Phase Change Memory 2 2011
8222071 Method for making self aligning pillar memory cell device 0 2011
* 2011/0189,819 Resistive Memory Structure with Buffer Layer 1 2011
8313979 Phase change memory cell having vertical channel access transistor 1 2011
* 2011/0217,818 PHASE CHANGE MEMORY CELL HAVING VERTICAL CHANNEL ACCESS TRANSISTOR 7 2011
8324681 Stacked non-volatile memory device and methods for fabricating the same 1 2011
8237144 Polysilicon plug bipolar transistor for phase change memory 1 2011
8587983 Resistance random access memory structure for enhanced retention 3 2011
8987700 Thermally confined electrode for programmable resistance memory 2 2011
8916845 Low operational current phase change memory structures 0 2011
8779408 Phase change memory cell structure 1 2012
8860111 Phase change memory cell array with self-converged bottom electrode and method for manufacturing 0 2012
8624236 Phase change memory cell having vertical channel access transistor 2 2012
9076964 Methods for forming resistance random access memory structure 0 2013
9559113 SSL/GSL gate oxide in 3D vertical channel NAND 0 2014
8853047 Self aligned fin-type programmable memory cell 0 2014
9159412 Staggered write and verify for phase change memory 1 2014
9336879 Multiple phase change materials in an integrated circuit for system on a chip application 0 2015
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VOLKSWAGEN AG (1)
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SAMSUNG ELECTRONICS CO., LTD. (5)
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* 2008/0165,570 Current Compliant Sensing Architecture for Multilevel Phase Change Memory 97 2007
8138028 Method for manufacturing a phase change memory device with pillar bottom electrode 8 2007
8030634 Memory array with diode driver and method for fabricating the same 2 2008
7825398 Memory cell having improved mechanical stability 3 2008
 
TOHOKU UNIVERSITY (4)
8663439 Sputtering target for producing metallic glass membrane and manufacturing method thereof 0 2005
* 2009/0139,858 Sputtering Target for Producing Metallic Glass Membrane and Manufacturing Method Thereof 2 2005
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RICOH COMPANY, LTD. (16)
* 6592958 Optical recording medium and sputtering target for fabricating the recording medium 5 2001
* 6652806 Method of producing a sputtering target 6 2001
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6827999 Optical information recording medium 12 2002
7075871 Method and device for recording optical data 29 2003
* 2003/0214,888 Method and device for recording optical data 0 2003
* 2004/0052,176 Optical information recording medium, method for determining recording condition, optical information recording apparatus, and information processing apparatus 19 2003
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* 2006/0222,810 Write-onece-read-many optical recording medium, sputtering target and the production method thereof 14 2006
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JX NIPPON MINING & METALS CORPORATION (2)
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* Cited By Examiner