Quantum semiconductor memory device including quantum dots
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United States of America Patent
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Aug 28, 2001
Issued Date -
N/A
app pub date -
Mar 22, 1999
filing date -
Aug 13, 1997
priority date (Note) -
Expired
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Abstract
A quantum semiconductor memory device includes a quantum structure formed on a substrate, wherein the quantum structure includes a plurality of self-organized quantum dots forming a strained heteroepitaxial system with respect to the substrate and an accumulation layer formed adjacent to the self-organized quantum dots, and wherein the self-organized quantum dots are formed of a semiconductor crystal having a composition set such that quantum levels of the self-organized quantum dots are located higher than a conduction band of the accumulation layer.
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