Method of fabricating, programming, and erasing a dual pocket two sided program/erase non-volatile memory cell
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United States of America Patent
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Aug 28, 2001
Grant Date -
N/A
app pub date -
Dec 21, 1998
filing date -
Dec 21, 1998
priority date (Note) -
Expired
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Abstract
A non-volatile memory cell is formed in a semiconductor substrate and includes a control gate and a floating gate formed over said semiconductor substrate. A first active region and a second active region formed in said substrate. A first implant region formed in said substrate, said first implant region contiguous to said first active region and a second implant region formed in said substrate, said second implant region contiguous to said second active region. A channel region separates said first implant region and said second implant region. In a further aspect, a method of programming and erasing a non-volatile memory cell is disclosed. Programming of said cell is accomplished by injecting hot carriers into a floating gate through a first area of an oxide layer by capacitively coupling said floating gate to a substrate. Erasing said cell is accomplished by injecting oppositely charged hot carriers into said floating gate through a second area of said oxide layer.
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