Chemical vapor deposition of titanium
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United States of America Patent
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Sep 4, 2001
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N/A
app pub date -
Jan 20, 2000
filing date -
Feb 25, 1998
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Abstract
A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a second precursor with the seed layer by CVD. The titanium layer is used to form contacts to active areas of substrate and for the formation of interlevel vias.
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